SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
·Collector-emitter sustaining voltage
V
CEO(sus)
=400V(Min)
·Collector-emitter saturation voltage
V
CE(sat)
=1.0V(Max.)@I
C
=3.0A,I
B
=0.6A
·Switching time-t
f
=1.0µs(Max.)@I
C
=3.0A
APPLICATIONS
·Designed for use in high-voltage ,high-
speed ,power switching in inductive circuit,
particularly suited for 115 and 220V switch-
mode applications such as switching
regulator’s ,inverters,,DC-DC and converter
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
2SC2335F
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
7
15
3.5
40
150
-50~150
UNIT
V
V
V
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
CONDITIONS
I
C
=3.0A ; I
B1
=0.6A,L=1mH
I
C
=3A; I
B
=0.6A
I
C
=3A; I
B
=0.6A
V
CB
=400V ;I
E
=0
V
CE
=400V ;V
BE(off)
=-1.5V
T
C
=125
V
EB
=5V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=1.0A ; V
CE
=5V
I
C
=3.0A ; V
CE
=5V
20
20
10
MIN
400
SYMBOL
V
(SUS)CEO
V
CEsat
V
BEsat
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
2SC2335F
TYP.
MAX
UNIT
V
1.0
1.2
10
10
1.0
10
V
V
µA
µA
mA
µA
80
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
V
CC
=150V;I
C
=3.0A;
I
B1
=-I
B2
=600mA;
R
L
=50D
1.0
2.5
1.0
µs
µs
µs
h
FE-2
Classifications
R
20-40
O
30-60
Y
40-80
2
Power technology
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