SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2358
DESCRIPTION
·With TO-3 package
·High voltage,high speed
APPLICATIONS
·Designed for switching-mode power
supplies ,CRT scanning,inverters,
and other industrial applications
PINNING(see fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1000
800
7
10
150
200
-65~200
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
1.17
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=10mA; I
B
=0
I
E
=1m A;I
C
=0
I
C
=5 A;I
B
=1 A
I
C
=5 A;I
B
=1 A
V
CB
=1000V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=5A ; V
CE
=5V
15
MIN
800
7
2SC2358
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
TYP.
MAX
UNIT
V
V
1.5
1.5
0.1
0.1
V
V
mA
mA
2
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