SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2361
DESCRIPTION
·With TO-220C package
·Complement to type 2SA1123
·Low collector saturation voltage
APPLICATIONS
·For power amplifier applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
100
70
6
4
25
150
-50~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=0.1 A; I
B
=0
I
E
=1m A; I
C
=0
I
C
=4A; I
B
=0.4A
I
C
=3A ; V
CE
=4V
V
CB
=100V; I
E
=0
V
EB
=6V; I
C
=0
I
C
=2.5A ; V
CE
=3V
I
C
=0.5A ; V
CE
=10V
50
MIN
70
6
2SC2361
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
f
T
TYP.
MAX
UNIT
V
V
1.5
2.0
10
10
240
70
V
V
µA
µA
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2361
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3