SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N3585
DESCRIPTION
·With TO-66 package
·Continuous collector current-I
C
=2A
·Power dissipation -PD=35W @T
C
=25
·V
CE(SAT)
=0.75V(Max)@I
C
=1A;I
B
=0.125A
APPLICATIONS
·High speed switching and linear amplification
·
High-voltage operational amplifiers
·
Switching regulators ,converters
·
Deflection stages and high fidelity amplifers
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
300
6
2
5
1
35
200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
5.0
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base -emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
CONDITIONS
I
C
=0.2A ; I
B
=0
I
C
=1A; I
B
=0.125A
I
C
=1A ;I
B
=0.1A
I
C
=1A ; V
CE
=10V
V
CE
=450V;V
BE(off)
=1.5V
V
CE
=300V;V
BE(off)
=1.5V T
C
=150
V
CE
=150V; I
B
=0
V
EB
=6V; I
C
=0
I
C
=0.1A ; V
CE
=10V
I
C
=1A ; V
CE
=2V
I
C
=1A ; V
CE
=10V
40
8
25
MIN
300
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
V
BE
I
CEX
I
CEO
I
EBO
h
FE-1
h
FE-2
h
FE-3
2N3585
TYP.
MAX
UNIT
V
0.75
1.4
1.4
1.0
3.0
5.0
0.5
V
V
V
mA
mA
mA
80
100
2
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