Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD350A
DESCRIPTION
·With
TO-3 package
·High
voltage ,high speed
APPLICATIONS
·For
color TV horizontal deflection
output applications
PINNING(see fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
·
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=90℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
700
5
5
7
22
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD350A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=0.1A; I
B
=0
700
V
V
(BR)EBO
Emitter-base breakdown votage
I
E
=10mA; I
C
=0
5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=4.5 A;I
B
=2A
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=4.5 A;I
B
=2A
1.3
V
μA
I
CBO
Collector cut-off current
V
CB
=800V;I
E
=0
10
h
FE-1
DC current gain
I
C
=1A ; V
CE
=5V
8
h
FE-2
DC current gain
I
C
=4A ; V
CE
=10V
3
2
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