SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High collector breakdown voltage
: V
CEO
=400V(Min)
·Excellent switching time
: t
r
=1.0µs(Max.)
: t
f
=1.0µs(Max.
APPLICATIONS
·High speed high voltage switching applications
·Switching regulator applications
·High speed DC-DC converter applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC2534
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25
P
C
Collector dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
20
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
6
2
0.5
1.5
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=10mA ; I
B
=0
I
C
=1mA ; I
E
=0
I
E
=1mA ; I
C
=0
I
C
=0.5A; I
B
=50mA
I
C
=0.5A; I
B
=50mA
V
CB
=400V ;I
E
=0
V
EB
=6V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=0.5A ; V
CE
=5V
20
20
MIN
400
500
6
2SC2534
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
TYP.
MAX
UNIT
V
V
V
1.0
1.5
100
1
V
V
µA
mA
Switching times
t
r
t
stg
t
f
Rise time
Storage time
Fall time
V
CC
=200V;
I
B1
=-I
B2
=50mA;R
L
=400=
Duty cycle?1%
1.0
2.5
1.0
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2534
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2534
4
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