SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(I) package
·High collector breakdown voltage
V
CEO
=400V(Min)
·Excellent switching times
: t
r
=1.0µs(Max.) t
f
=1.0µs(Max.)@ I
C
=4A
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC2555
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-DC
Collector current-peak
Base current
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
80
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
500
400
7
8
10
4
2.5
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=10mA ,I
B
=0
I
C
=1mA ,I
E
=0
I
C
=4A; I
B
=0.8A
I
C
=4A; I
B
=0.8A
V
CB
=400V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=4A ; V
CE
=5V
15
10
MIN
400
500
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
2SC2555
TYP.
MAX
UNIT
V
V
1.0
1.5
100
1.0
V
V
µA
mA
Switching times
t
r
t
stg
t
f
Rise time
Storage time
Fall time
V
CC
?200V;
R
L
=50A
I
B1
=-I
B2
=0.4A
1.0
2.5
1.0
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2555
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2555
4
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