SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2564
DESCRIPTION
·With MT-200 package
·Complement to type 2SA1094
·High transition frequency
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (MT-200) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25°C)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collectorl power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
140
140
5
12
1.2
150
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=0.1A; I
B
=0
I
E
=10mA; I
C
=0
I
C
=5 A; I
B
=0.5 A
I
C
=5A ; V
CE
=5V
V
CB
=140V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
I
C
=1A ; V
CE
=10V
55
40
MIN
140
5
2SC2564
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
TYP.
MAX
UNIT
V
V
2.0
2.0
50
50
240
V
V
µA
µA
80
MHz
h
FE-1
classifications
R
55-110
O
80-160
Y
120-240
2
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