SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2608
DESCRIPTION
·With TO-3 package
·Complement to type 2SA1117
·High power dissipation
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(T
C
=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
200
200
6
17
200
150
-55~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=25mA ;I
B
=0
I
C
=1mA ;I
E
=0
I
E
=1mA ;I
C
=0
I
C
=8A; I
B
=0.8A
V
CB
=200V; I
E
=0
V
EB
=6V; I
C
=0
I
C
=8A ; V
CE
=4V
I
C
=1A ; V
CE
=12V
20
MIN
200
200
6
2SC2608
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
I
CBO
I
EBO
h
FE
f
T
TYP.
MAX
UNIT
V
V
V
2.0
0.1
0.1
V
mA
mA
20
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2608
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
京公网安备 11010802033920号
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