SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2626
DESCRIPTION
·With TO-3PN package
·High voltage,high speed switching
·High reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Tc=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
400
300
7
15
5
80
150
-55~150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
1.55
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter sustaining voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Emitter-base saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=10mA ;I
B
=0
I
C
=1A ;I
B
=0
I
C
=1mA ;I
E
=0
I
E
=0.1mA ;I
C
=0
I
C
=6A; I
B
=1.2A
I
C
=6A ;I
B
=1.2A
V
CB
=400V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=6A ; V
CE
=5V
10
MIN
300
300
400
7
SYMBOL
V
(BR)CEO
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
2SC2626
TYP.
MAX
UNIT
V
V
V
V
1.2
1.5
1.0
0.1
V
V
mA
mA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=10A I
B1
=-I
B2
=2A
R
L
=20C,Pw=20µs
DutyD2%
0.8
2.0
0.8
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2626
Fig.2 outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2626
4
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