SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2654
DESCRIPTION
·With TO-220 package
·Complement to type 2SA1129
·Low collector saturation votage
APPLICATIONS
·For low-frequency power amplifiers and
mid-speed switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
Base current (DC)
T
C
=25
P
T
Total power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
1.5
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
100
40
7
7
15
3.5
40
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=3A ;I
B
=0.1A
I
C
=5A ;I
B
=0.5A
I
C
=3A ;I
B
=0.1A
I
C
=5A ;I
B
=0.5A
V
CB
=40V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=3A ; V
CE
=1V
I
C
=5A ; V
CE
=1V
40
20
MIN
SYMBOL
V
CE(sat)-1
V
CE(sat)-2
V
BE(sat)-1
V
BE(sat)-2
I
CBO
I
EBO
h
FE-1
h
FE-2
2SC2654
TYP.
MAX
0.3
0.6
1.5
2.0
10
10
320
UNIT
V
V
V
V
µA
µA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=5.0A
I
B1
=0.5 A ,I
B2
=-0.5A
V
CC
>20V,
R
L
=4.0@
1.0
2.5
1.0
µs
µs
µs
h
FE-1
Classifications
M
40-80
L
60-120
K
100-200
J
160-320
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2654
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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