SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2660 2SC2660A
DESCRIPTION
·With TO-220 package
·Complement to type 2SA1133/1133A
·High V
CEO
·Large P
C
APPLICATIONS
·Power amplifier applications
·TV vertical deflection applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2SC2660
V
CEO
Collector-emitter voltage
2SC2660A
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
180
6
2
3
30
150
-55~150
V
A
A
W
CONDITIONS
Open emitter
VALUE
200
150
V
UNIT
V
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Base-emitter on voltage
2SC2660
I
C
=5mA ;I
B
=0
2SC2660A
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
I
C
=0.5mA ;I
E
=0
I
E
=0.5mA ;I
C
=0
V
CB
=200V;I
E
=0
V
EB
=4V; I
C
=0
I
C
=0.15A ; V
CE
=10V
I
C
=0.4A ; V
CE
=10V
CONDITIONS
I
C
=0.5A ;I
B
=50m A
I
C
=0.4A ; V
CE
=10V
2SC2660 2SC2660A
SYMBOL
V
CEsat
V
BE
MIN
TYP.
MAX
1.0
1.0
UNIT
V
V
V
(BR)CEO
Collector-emitter
breakdown voltage
150
V
180
200
6
50
50
60
50
240
V
V
µA
µA
h
FE-1
classifications
Q
60-140
P
100-240
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2660 2SC2660A
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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