SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2751
·
DESCRIPTION
·With TO-3N package
·High voltage ,high speed
APPLICATIONS
·For use in high voltage ,high speed
and power switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
15
30
7.5
120
150
-55~150
UNIT
V
V
V
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
CONDITIONS
I
C
=10A ;I
B
=2A; L=50µH
I
C
=10A ;I
B
=2A
I
C
=10A ;I
B
=2A
V
CB
=400V; I
E
=0
V
CE
=400V; V
BE(off)
=-1.5V
T
a
=125
V
EB
=5V; I
C
=0
I
C
=2A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
I
C
=10A ; V
CE
=5V
15
10
7
MIN
400
2SC2751
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
TYP.
MAX
UNIT
V
1.0
1.5
100
100
1.0
10
80
V
V
µA
µA
mA
µA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=10A;I
B1
=-I
B2
=2A
R
L
=15@; V
CC
A150V
1.0
2.5
0.7
µs
µs
µs
h
FE-1
Classifications
N
15-30
R
20-40
O
30-60
Y
40-80
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2751
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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