Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4941
DESCRIPTION
・With
TO-3PML package
・Switching
power transistor
・High
breakdown voltage
PINNING
PIN
1
2
3
Base
Collector
Fig.1 simplified outline (TO-3PML) and symbol
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
B
P
T
T
j
T
stg
PARAMETER
固电
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
导½
半
CONDITIONS
Open emitter
Collector current-Peak
Base current
Base current-Peak
HAN
INC
SEM
GE
Open base
Open collector
ON
IC
OR
DUT
VALUE
1500
800
7
6
12
3
6
UNIT
V
V
V
A
A
A
A
W
℃
℃
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
65
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
VALUE
1.92
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CBO
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter sustaining voltage
Collector-base voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=0.2A ;I
B
=0
I
C
=1mA ;I
E
=0
I
C
=3A ;I
B
=0.6A
I
C
=3A; I
B
=0.6A
V
CB
=1200V; I
E
=0
V
CE
=RatedV
CEO
; I
B
=0
V
EB
=RatedV
EBO
; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=1mA ; V
CE
=5V
I
C
=0.6A ; V
CE
=10V
15
MIN
800
1500
2SC4941
TYP.
MAX
UNIT
V
V
0.5
1.5
100
100
100
V
V
μA
μA
μA
Switching times
t
on
t
s
t
f
电半
固
Turn-on time
Storage time
Fall time
Transition frequency
导½
HAN
INC
SEM
GE
ON
IC
OR
DUT
7
8
0.5
3.5
0.3
MHz
μs
μs
μs
I
C
=3A
I
B1
=0.6A; I
B2
=-1.2A
V
BB2
=4V
R
L
=85Ω
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4941
固电
导½
半
HAN
INC
SEM
GE
ON
IC
OR
DUT
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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