SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2830
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
mb
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
500
400
7
20
200
200
-65~200
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance from junction to mounting base
VALUE
1.0
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=0.1A ; I
B
=0
I
C
=12A; I
B
=2.4A
I
C
=12A; I
B
=2.4A
V
CB
=500V; I
E
=0
V
CE
=400V; I
B
=0
V
EB
=7V; I
C
=0
I
C
=2.4A ; V
CE
=5V
I
C
=12A ; V
CE
=5V
15
10
MIN
400
2SC2830
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
TYP.
MAX
UNIT
V
1.2
1.5
0.1
0.1
0.1
50
V
V
mA
mA
mA
2
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