SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2832 2SC2832A
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·High V
CBO
·High speed switching
APPLICATIONS
·For high speed switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
PARAMETER
2SC2832
V
CBO
Collector-base voltage
2SC2832A
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open base
Open collector
Open emitter
900
500
8
5
10
3
40
150
-55~150
V
V
A
A
A
W
CONDITIONS
VALUE
800
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
2SC2832
2SC2832A
CONDITIONS
I
C
=0.2A; L=25mH
I
C
=3A; I
B
=0.6A
I
C
=3A; I
B
=0.6A
V
CB
=800V;I
E
=0
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
2SC2832 2SC2832A
MIN
500
TYP.
MAX
UNIT
V
1.0
1.5
V
V
I
CBO
Collector
cut-off current
100
V
CB
=900V;I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
C
=0.5A ; V
CE
=10V
15
8
3
100
µA
I
EBO
h
FE-1
h
FE-2
f
T
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
µA
MHz
Switching times
2SC2832
t
on
Turn-on time
2SC2832A
t
stg
Storage time
2SC2832
t
f
Fall time
2SC2832A
1.2
I
C
=3A ; I
B1
=-I
B2
=-0.6A
V
CC
=200V
1.2
3.0
1.0
µs
µs
1.0
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2832 2SC2832A
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
京公网安备 11010802033920号
EEWORLD
