SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2838
DESCRIPTION
·With MT-200 package
·Fast switching speed
·Wide area of safe operation
APPLICATIONS
·For high frequency power amplifiers, audio
power amplifiers,switching regulators and
DC-DC converters application
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (MT-200) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25°C)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
150
150
5
12
120
150
-55~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=10mA; I
B
=0
I
C
=1mA; I
E
=0
I
E
=1mA; I
C
=0
I
C
=5 A; I
B
=0.5 A
V
CB
=140V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=3A ; V
CE
=4V
I
C
=1A ; V
CE
=10V
60
MIN
150
150
5
2SC2838
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
TYP.
MAX
UNIT
V
V
V
1.8
50
50
V
µA
µA
70
MHz
2
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