SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1439
DESCRIPTION
·With TO-3PN package
·Built-in damper diode
·High voltage ,high reliability
·High speed switching
·Wide area of safe operation
APPLICATIONS
·For horizontal deflection output applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
EBO
I
C
I
CM
I
BM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base current (Pulse)
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open collector
VALUE
1500
5
3
10
3.5
50
130
-55~130
UNIT
V
V
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
DC current gain
Storage time
I
C
=2A
I
Bend
=0.75A,L
Leak
=5µH
Fall time
Diode forward voltage
I
F
=-4A,I
B
=0
CONDITIONS
I
E
=500mA; I
C
=0
I
C
=2A; I
B
=0.75A
I
C
=2A; I
B
=0.75A
V
CB
=750V; I
E
=0
V
CB
=1500V; I
E
=0
I
C
=2A ; V
CE
=10V
4
MIN
5
2SD1439
SYMBOL
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
CBO
h
FE
t
s
t
f
V
F
TYP.
MAX
UNIT
V
5.0
1.5
50
1
12
7.0
0.75
2.2
V
V
µA
mA
µs
µs
V
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1439
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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