SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2913
DESCRIPTION
·With TO-66 package
·High breakdown voltage
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(T
a
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
7
3
40
175
-55~175
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=5mA ; R
BE
=8
I
C
=1mA ; I
E
=0
I
E
=1mA ; I
C
=0
I
C
=7A; I
B
=1.4A
I
C
=7A; I
B
=1.4A
V
CB
=400V ;I
E
=0
V
EB
=5V; I
C
=0
I
C
=3A ; V
CE
=5V
12
MIN
400
500
7
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
2SC2913
TYP.
MAX
UNIT
V
V
V
1.0
2.0
100
100
V
V
µA
µA
2
京公网安备 11010802033920号
EEWORLD
