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2SC2922

Description
17 A, 180 V, NPN, Si, POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size167KB,4 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
Download Datasheet Parametric View All

2SC2922 Overview

17 A, 180 V, NPN, Si, POWER TRANSISTOR

2SC2922 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current17 A
Maximum Collector-Emitter Voltage180 V
Processing package descriptionMT-200, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingNOT SPECIFIED
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor30
Rated crossover frequency50 MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2922
DESCRIPTION
·With MT-200 package
·Complement to type 2SA1216
APPLICATIONS
·Audio and general purpose
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (MT-200) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
180
180
5
17
5
200
150
-55~150
UNIT
V
V
V
A
A
W

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