SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2928
DESCRIPTION
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·For high voltage,high speed and high
power switching applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(T
C
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
1500
800
7
5
7
2.5
80
150
-45~150
UNIT
V
V
V
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=0.2A ; R
BE
=9
I
E
=10mA ; I
C
=0
I
C
=1.5A; I
B
=0.3A
I
C
=1.5A; I
B
=0.3A
V
CB
=1200V ;I
E
=0
V
CE
=650V ; R
BE
=9
I
C
=0.5A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
15
7
MIN
800
7
2SC2928
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
CEO
h
FE-1
h
FE-2
TYP.
MAX
UNIT
V
V
1.0
1.5
100
100
V
V
µA
µA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=3.0A; V
CC
=250V
I
B1
=0.6A ,I
B2
=-1.5A
1.0
3.0
1.0
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2928
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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