SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2965
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(T
C
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
600
450
7
15
150
150
-55~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=5mA ; R
BE
=8
I
C
=1mA ; I
E
=0
I
E
=1mA ; I
C
=0
I
C
=10A; I
B
=2A
I
C
=10A; I
B
=2A
V
CB
=500V ;I
E
=0
V
EB
=5V; I
C
=0
I
C
=10A ; V
CE
=5V
I
C
=2A ; V
CE
=10V
I
E
=0 ; V
CB
=10V,f=1MHz
7
MIN
450
600
7
2SC2965
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
f
T
C
OB
TYP.
MAX
UNIT
V
V
V
1.5
1.5
100
100
20
28
230
V
V
µA
µA
MHz
pF
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2965
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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