SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2944
DESCRIPTION
·With TO-3PN package
·High voltage,high speed switching
·High reliability
·Low saturation voltage
APPLICATIONS
·Color & B/W TV power supply
·Active power filter
·Industrial use power supply
·General purpose power amplifiers
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS(T
a
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Base current (DC)
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
250
200
7
15
5
100
150
-55~150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
Thermal resistance junction case
PARAMETER
MAX
1.25
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=10mA ; I
B
=0
I
E
=0.1mA ; I
C
=0
I
C
=0.1mA ; I
E
=0
I
C
=6A ;I
B
=1.2A
I
C
=6A ;I
B
=1.2A
V
CB
=250V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=2A ; V
CE
=5V
20
MIN
200
7
250
2SC2944
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
(BR)CBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
TYP.
MAX
UNIT
V
V
V
0.8
1.2
0.1
0.1
80
V
V
mA
mA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=10A; I
B1
=-I
B2
=2A
R
L
=5APw=20µs,DutyB2%
0.8
1.5
0.4
µs
µs
µs
2
RF/Wirelessly
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