SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2975
DESCRIPTION
·With TO-66 package
·High breakdown voltage
·Fast switching speed.
APPLICATIONS
·For switching regulator applications
·General purpose power amplifier
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(T
a
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
800
400
7
5
40
175
-55~175
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=5mA ; R
BE
=:
I
C
=1mA ; I
E
=0
I
E
=1mA ; I
C
=0
I
C
=2A; I
B
=0.3A
I
C
=2A; I
B
=0.3A
V
CB
=640V ;I
E
=0
V
EB
=5V; I
C
=0
I
C
=2A ; V
CE
=5V
10
MIN
400
800
7
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
2SC2975
TYP.
MAX
UNIT
V
V
V
1.0
1.5
30
10
35
V
V
µA
µA
2
Sensor
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