SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·High voltage power switching character
display horizontal deflection output
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
DESCRIPTION
2SC3025
Fig.1 simplified outline (TO-3) and symbol
Collector
ABSOLUTE MAXIMUM RATINGS(T
a
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
1500
800
6
5
6
50
150
-45~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
I
C
=10mA ;R
BE
=8
I
E
=10mA; I
C
=0
I
C
=5A; I
B
=1.25A
I
C
=5A; I
B
=1.25A
V
CE
=1500V; R
BE
=8
MIN
800
6
2SC3025
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CES
TYP.
MAX
UNIT
V
V
2.0
1.5
0.5
V
V
mA
Switching times
t
s
t
f
Storage time
I
C
=5A; I
B1
=1A;I
B2
=-2.5A
Fall time
0.5
µs
4.0
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3025
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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