SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2987
DESCRIPTION
·With TO-3PN package
·Complement to type 2SA1227
·High power dissipation
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
140
140
5
12
20
120
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=5A ;I
B
=0.5A
I
C
=5A ;I
B
=0.5A
V
CB
=140V; I
E
=0
V
EB
=3V; I
C
=0
I
C
=2A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
I
C
=1A ; V
CE
=5V
I
E
=0;f=1MHz;V
CB
=10V
60
40
MIN
SYMBOL
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
2SC2987
TYP.
0.6
1.4
MAX
1.5
2.0
50
50
320
UNIT
V
V
µA
µA
50
190
MHz
pF
h
FE-1
Classifications
R
60-120
Q
100-200
P
160-320
2
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