SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD970
DESCRIPTION
·With TO-220 package
·High DC current gain
·DARLINGTON
·Complement to type 2SB791
APPLICATIONS
·For medium speed and power
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
120
120
7
8
12
40
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
DC current gain
CONDITIONS
I
C
=25mA ;R
BE
=0
I
E
=50mA ; I
C
=0
I
C
=4A ;I
B
=8mA
I
C
=8A ;I
B
=80mA
I
C
=4A ;I
B
=8mA
I
C
=8A ;I
B
=80mA
V
CB
=120V; I
E
=0
V
CE
=100V; R
BE
=@
I
C
=4A ; V
CE
=3V
1000
MIN
120
7
2SD970
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
I
CBO
I
CEO
h
FE
TYP.
MAX
UNIT
V
V
1.5
3.0
2.0
3.5
100
10
20000
V
V
V
V
µA
µA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=4A ;I
B1
=-I
B2
=8mA
0.4
5.4
1.1
µs
µs
µs
2
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