SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High breakdown voltage
: V
CBO
=800V(Min)
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·500V/3A switching regulator applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC3086
Absolute maximum ratings(Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
C
=25
P
C
Collector dissipation
1.75
T
j
T
stg
Junction temperature
Storage temperature
150
-55~150
PW4300µs, Duty Cycle410%
CONDITIONS
Open emitter
Open base
Open collector
VALUE
800
500
7
3
6
1
40
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=1mA ; R
BE
=B
I
C
=1mA ; I
E
=0
I
E
=1mA ; I
C
=0
I
C
=1.5A; I
B
=0.3A
I
C
=1.5A; I
B
=0.3A
V
CB
=500V ;I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.3A ; V
CE
=5V
I
C
=1.5A ; V
CE
=5V
I
C
=0.3A ; V
CE
=10V
f=10MHz ; V
CB
=10V
15
8
MIN
500
800
7
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(
sat
)
V
BE(
sat
)
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
2SC3086
TYP.
MAX
UNIT
V
V
V
1.0
1.5
10
10
50
V
V
µA
µA
18
40
MHz
pF
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
V
CC
=200V; I
C
=2A
I
B1
=0.4A;I
B2
=-0.4A;
R
L
=100F
1.0
3.0
1.0
µs
µs
µs
h
FE-1
classifications
L
15-30
M
20-40
N
30-50
2
Analogue and Mixed Signal
京公网安备 11010802033920号
EEWORLD
