Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
TIP41D/41E/41F
DESCRIPTION
・With
TO-220C package
・Complement
to type TIP42D/42E/42F
APPLICATIONS
・For
medium power linear
switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
・
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
固电
Collector-base voltage
导½
半
PARAMETER
CONDITIONS
TIP41D
TIP41E
V
CEO
HA
INC
ES
NG
TIP41F
TIP41D
TIP41E
TIP41F
Open emitter
MIC
E
DUC
ON
VALUE
160
OR
T
180
200
120
140
160
UNIT
V
Collector-emitter voltage
Open base
V
V
EBO
I
C
I
CM
I
B
Emitter-base voltage
Collector current (DC)
Collector current-Pulse
Base current
Open collector
5
6
10
3
V
A
A
A
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
65
W
2
150
-65~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
TIP41D
V
CEO(SUS)
Collector-emitter
sustaining voltage
TIP41E
TIP41F
V
CEsat
V
BE
Collector-emitter saturation voltage
Base-emitter on voltage
TIP41D
I
CES
Collector
cut-off current
TIP41E
TIP41F
I
C
=6A; I
B
=1.5A
I
C
=6A ; V
CE
=4V
V
CE
=120V; V
EB
=0
V
CE
=140V; V
EB
=0
V
CE
=160V; V
EB
=0
I
C
=30mA; I
B
=0
CONDITIONS
MIN
120
140
160
TIP41D/41E/41F
TYP.
MAX
UNIT
V
1.5
2.0
V
V
0.4
mA
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
固电
Collector cut-off current
导½
半
ANG
CH
IN
Emitter cut-off current
DC current gain
DC current gain
Transiton frequency
MIC
E SE
V
CE
=90V; I
B
=0
V
EB
=5V; I
C
=0
I
C
=0.3A ; V
CE
=4V
I
C
=3A ; V
CE
=4V
I
C
=0.5A ; V
CE
=10V
OR
CT
NDU
O
0.7
1.0
30
15
3
mA
mA
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
TIP41D/41E/41F
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 Outline dimensions
3
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