SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SA1249
·High breakdown voltage
·Large current capacity
APPLICATIONS
·Color TV sound output;converters;
Inverters’ applications
·160V/1.5A switching applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
2SC3117
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
10
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
180
160
6
1.5
2.5
1.0
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=1mA; R
BE
=<
I
C
=10µA; I
E
=0
I
E
=10µA ; I
C
=0
I
C
=500mA; I
B
=50mA
I
C
=500mA; I
B
=50mA
V
CB
=120V; I
E
=0
V
EB
=4V; I
C
=0
I
C
=100mA ; V
CE
=5V
I
C
=10mA ; V
CE
=5V
I
C
=50mA ; V
CE
=10V
I
E
=0 ; V
CB
=10V;f=1MHz
100
90
MIN
2SC3117
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
ob
TYP.
160
180
6
0.13
0.85
MAX
UNIT
V
V
V
0.45
1.2
1.0
1.0
400
V
V
µA
µA
120
22
MHz
pF
h
FE-1
Classifications
R
100-200
S
140-280
T
200-400
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3117
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3117
4
京公网安备 11010802033920号
EEWORLD
