SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3158
DESCRIPTION
·With TO-220F package
·High voltage
·High switching speed
APPLICATIONS
·For switching regulator applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Ta=25
P
C
Collector dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
60
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
7
14
3
1. 5
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2SC3158
SYMBOL
TYP.
MAX
UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter breakdown voltage
I
C
=10mA ; I
B
=0
I
C
=1mA ; I
E
=0
I
E
=1mA ; I
C
=0
I
C
=3A; I
B
=0.6A
I
C
=3A; I
B
=0.6A
V
CB
=400V ;I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=4A ; V
CE
=5V
400
V
Collector-base breakdown voltage
500
V
Emitter-base breakdown voltage
7
V
Collector-emitter saturation voltage
1.0
V
Base-emitter saturation voltage
1.2
V
Collector cut-off current
10
µA
Emitter cut-off current
10
µA
DC current gain
20
80
DC current gain
10
2
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