SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3157
DESCRIPTION
·With TO-220 package
·High switching speed
·Low collector saturation voltage
·Complement to type 2SA1261
APPLICATIONS
·For high voltage ,high speed and
power switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
T
a
=25
P
T
Total power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
60
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
150
100
7
10
20
3.5
1.5
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3157
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
CONDITIONS
I
C
=5A ;I
B1
=0.5A;L=1mH
I
C
=5A; I
B
=0.5A
I
C
=5A; I
B
=0.5A
V
CB
=100V; I
E
=0
V
CE
=100V; V
BE
=1.5V
Ta=125
V
EB
=5V; I
C
=0
I
C
=0.5A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
40
40
20
200
MIN
100
0.6
1.5
0.01
0.01
1.0
0.01
TYP.
MAX
UNIT
V
V
V
mA
mA
mA
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=5A;I
B1
=-I
B2
=0.5A ,
R
L
=10@;V
CC
A50V
0.5
1.5
0.5
µs
µs
µs
h
FE-2
classifications
M
40-80
L
60-120
K
100-200
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3157
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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