SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3179
DESCRIPTION
·With TO-220 package
·Complement to type 2SA1262
·Low collector saturation voltage
APPLICATIONS
·Audio and general purpose applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
80
60
6
4
1
30
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=25mA ,I
B
=0
I
C
=2A; I
B
=0.2 A
V
CB
=80V; I
E
=0
V
EB
=6V; I
C
=0
I
C
=1A ; V
CE
=4V
I
E
=-0.2A ; V
CE
=12V
f=1MHz ; V
CB
=10V
40
MIN
60
2SC3179
SYMBOL
V
(BR)CEO
V
CE(
sat
)
I
CBO
I
EBO
h
FE
f
T
C
OB
TYP.
MAX
UNIT
V
0.6
100
100
V
µA
µA
15
60
MHz
pF
Switching times resistive load
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=2A I
B1
=-I
B2
=0.2A
R
L
=10A;V
CC
=20V
0.2
1.9
0.29
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3179
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
京公网安备 11010802033920号
EEWORLD
