SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PFa package
·High V
CBO
·Low collector saturation voltage
APPLICATIONS
·For high speed switching applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
2SC3211A
ABSOLUTE MAXIMUM RATINGS(T
a
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
3
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
900
500
8
5
10
3
70
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=0.2A ;L=25mH
I
C
=3A; I
B
=0.6A
I
C
=3A; I
B
=0.6A
V
CB
=900V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
C
=0.5A ; V
CE
=10V
15
8
MIN
500
2SC3211A
SYMBOL
V
CEO(SUS)
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
TYP.
MAX
UNIT
V
1.0
1.5
0.1
0.1
V
V
mA
mA
3
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=3A; I
B1
=-I
B2
=0.6A
V
CC
=200V
1.2
3.0
1.2
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3211A
Fig.2 outline dimensions (unindicated tolerance:±0.3mm)
3
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