SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3212 2SC3212A
DESCRIPTION
·With TO-3PFa package
·Low collector saturation voltage
·High V
CBO
·High speed switching
APPLICATIONS
·For high speed switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
PARAMETER
2SC3212
V
CBO
Collector-base voltage
2SC3212A
V
CEO
V
EBO
I
C
I
CM
I
B
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
3
150
-55~150
Open base
Open collector
Open emitter
900
500
8
7
15
4
100
W
V
V
A
A
A
CONDITIONS
VALUE
800
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3212 2SC3212A
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
2SC3212
2SC3212A
CONDITIONS
I
C
=0.2A;L=25mH
I
C
=5A ;I
B
=1A
I
C
=5A ;I
B
=1A
V
CB
=800V; I
E
=0
100
V
CB
=900V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
I
C
=0.5A ; V
CE
=10V;f=1MHz
15
8
3.5
MHz
100
µA
µA
MIN
500
1.0
1.5
TYP.
MAX
UNIT
V
V
V
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
Collector
cut-off current
I
EBO
h
FE-1
h
FE-2
f
T
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Switching times
2SC3212
t
on
Turn-on time
2SC3212A
t
stg
Storage time
2SC3212
t
f
Fall time
2SC3212A
1.2
I
C
=5A; V
CC
=200V
I
B1
=-I
B2
=1A
1.2
2.5
1.0
µs
µs
1.0
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3212 2SC3212A
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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