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2SC3256

Description
POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size141KB,4 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
Download Datasheet Parametric Compare View All

2SC3256 Overview

POWER TRANSISTOR

2SC3256 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeGENERAL PURPOSE POWER
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3679
DESCRIPTION
・With
TO-3PN package
・High
voltage switching transistor
APPLICATIONS
・For
switching regulator and
general purpose applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
固电
PARAMETER
Collector-base voltage
导½
HA
INC
Base current (DC)
Collector-emitter voltage
Emitter-base voltage
ES
NG
Open emitter
Open base
MIC
E
CONDITIONS
OR
CT
NDU
O
VALUE
900
800
7
5
10
2.5
UNIT
V
V
V
A
A
A
W
Open collector
Collector current (DC)
Collector current -peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
100
150
-55~150

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