SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3297
DESCRIPTION
·With TO-220Fa package
·Low saturation voltage
·High speed switching time
APPLICATIONS
·High current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
30
30
5
3
15
150
-55~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=10mA , I
B
=0
I
C
=1mA , I
E
=0
I
E
=1mA , I
C
=0
I
C
=2A ;I
B
=0.2A
I
C
=0.5A ; V
CE
=5V
V
CB
=30V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.5A ; V
CE
=2V
I
C
=3A ; V
CE
=5V
I
C
=0.5A ; V
CE
=5V
70
20
MIN
30
30
5
2SC3297
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
TYP.
MAX
UNIT
V
V
V
1.0
1.0
10
10
280
V
V
µA
µA
100
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3297
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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