SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type 2SA1329
·High speed switching time
: t
stg
=1.0
µs(Typ.)
·Low collector saturation voltage
: V
CE(sat)
=0.4V(Max.)@I
C
=6A
APPLICATIONS
·For high current switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC3346
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
80
80
6
12
2
40
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=50mA ; I
B
=0
I
C
=6A; I
B
=0.3A
I
C
=6A; I
B
=0.3A
V
CB
=80V ;I
E
=0
V
EB
=6V; I
C
=0
I
C
=1A ; V
CE
=1V
I
C
=6A ; V
CE
=1V
I
C
=1A ; V
CE
=5V
I
E
=0 ; V
CB
=10V,f=1MHz
70
40
80
MIN
80
0.2
0.9
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
2SC3346
TYP.
MAX
UNIT
V
0.4
1.2
10
10
240
V
V
µA
µA
MHz
pF
220
Switching times
T
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
B1
=-I
B2
=0.3A;
R
L
=5E,V
CC
=30V
Pw=20µs ;DutyF1%
0.2
1.0
0.2
µs
µs
µs
h
FE-1
classifications
O
70-140
Y
120-240
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3346
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3346
4
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