SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3420
DESCRIPTION
·With TO-126 package
·High DC current gain
·Low saturation voltage
·High collector power dissipation
APPLICATIONS
·Storobo flash applications
·Medium power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector- emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
10
150
-55 +150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
50
20
8
5
8
1
1.5
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3420
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector cutoff current
Emitter cutoff current
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
V
CB
=40V;I
E
=0
V
EB
=8V;I
C
=0
I
C
=10mA ;I
B
=0
I
C
=4A ;I
B
=0.1A
I
C
=4A ; V
CE
=2V
I
C
=0.5A ; V
CE
=2V
I
C
=4A ; V
CE
=2V
I
E
=0; V
CB
=10V;f=1MHz
I
C
=0.5A ; V
CE
=2V,
140
70
40
100
pF
MHz
20
1
1.5
600
MIN
TYP.
MAX
100
100
UNIT
nA
nA
V
V
V
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
V
BE
h
FE-1
h
FE-2
C
Ob
f
T
h
FE-1
Classifications
Y
140-240
GR
200-400
BL
300-600
2
51mcu
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