SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1391
DESCRIPTION
·With TO-3PN package
·High speed switching
·High voltage,high reliability
·Wide area of safe operation
APPLICATIONS
·For horizontal deflection output applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
700
6
5
17
100
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2SD1391
SYMBOL
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=100mA; I
B
=0
700
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=1mA; I
C
=0
6
V
V
CEsat
Collector-emitter saturation voltage
I
C
=4.5A; I
B
=2A
2.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=4.5A; I
B
=2A
1.3
V
V
CB
=750V; I
E
=0
I
CBO
Collector cut-off current
V
CB
=1500V; I
E
=0
50
µA
1.0
mA
h
FE
DC current gain
I
C
=3A ; V
CE
=10V
4
15
t
f
Fall time
I
C
=4A
I
B
end
=1.5A,L
B
=10µH
1.0
µs
t
s
Storage time
11
µs
2
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