SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3506
DESCRIPTION
·With TO-3PFa package
·High-speed switching
·High collector-base voltage V
CBO
·Satisfactory linearity of forward
current transfer ratio h
FE
APPLICATIONS
·For high-speed switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
C
=25
P
C
Collector power dissipation
3
T
j
T
stg
Junction temperature
Storage temperature
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1000
800
7
3
6
2
70
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=0.5A ;L=50mH
I
C
=2A ;I
B
=0.4A
I
C
=2A ;I
B
=0.4A
V
CB
=1000V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=2A ; V
CE
=5V
I
C
=0.2A ; V
CE
=5V;f=1MHz
6
4
MIN
800
2SC3506
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
TYP.
MAX
UNIT
V
1.5
1.5
50
50
V
V
µA
µA
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=2A; V
CC
=250V
I
B1
=0.4A ,I
B2
=-0.8A
1.0
2.5
0.5
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3506
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3506
4
京公网安备 11010802033920号
EEWORLD
