SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3627
DESCRIPTION
·With TO-220Fa package
·High collector breakdown voltage
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
30
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
250
200
7
10
15
2
2.0
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=10mA; I
B
=0
I
C
=1mA; I
E
=0
I
C
=5 A;I
B
=0.5 A
I
C
=5 A;I
B
=0.5 A
V
CB
=200V ;I
E
=0
V
EB
=7V ;I
C
=0
I
C
=10mA ; V
CE
=5V
I
C
=5A ; V
CE
=5V
15
20
MIN
200
250
2SC3627
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
TYP.
MAX
UNIT
V
V
1.0
1.5
100
1
V
V
µA
mA
80
Switching times
t
r
t
s
t
f
Rise time
Storage time
Fall time
V
CC
:150V,R
L
=25=
I
B1
=-I
B2
=0.6 A
1.0
2.5
1.0
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3627
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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