SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3636
DESCRIPTION
·With TO-3PN package
·High voltage ,high speed
·High reliability
APPLICATIONS
·Ultrahigh-definition CRT display horizontal
deflection output applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
900
500
7
7
14
80
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=100mA ; I
B
=0
I
C
=4A ;I
B
=0.8A
I
C
=4A ;I
B
=0.8A
V
CB
=500V; I
E
=0
V
CE
=900V; R
BE
=0
V
EB
=5V; I
C
=0
I
C
=0.8A ; V
CE
=5V
8
MIN
500
2SC3636
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CES
I
EBO
h
FE
TYP.
MAX
UNIT
V
2.0
1.5
10
0.5
1.0
V
V
µA
mA
mA
Switching times
t
s
t
f
Storage time
Fall time
3.0
0.1
0.2
µs
µs
V
CC
=200V;I
C
=4A;
I
B1
=0.8A; I
B2
=-1.6A
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3636
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3636
4
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