SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3858
DESCRIPTION
·With MT-200 package
·Complement to type 2SA1494
APPLICATIONS
·Audio and general purpose
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (MT-200) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25°C)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
200
200
6
17
5
200
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=50mA; I
B
=0
I
C
=10 A;I
B
=1 A
V
CB
=200V; I
E
=0
V
EB
=6V; I
C
=0
I
C
=8A ; V
CE
=4V
I
C
=1A ; V
CE
=12V
I
E
=0; V
CB
=10V;f=1MHz
50
MIN
200
2SC3858
SYMBOL
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
TYP.
MAX
UNIT
V
2.5
100
100
180
20
300
V
µA
µA
MHz
pF
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=10A;R
L
=4A
I
B1
=- I
B2
=1A
V
CC
=40V
0.50
1.80
0.60
µs
µs
µs
h
FE
classifications
Y
50-100
P
70-140
G
90-180
2
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