SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3892
DESCRIPTION
·With TO-3P(H)IS package
·Built-in damper diode
·High voltage ,high speed
APPLICATIONS
·Horizontal deflection output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
1400
600
5
7
14
3.5
50
150
-55~150
UNIT
V
V
V
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
Diode forward voltage
Storage time
Resistive load
I
CP
=5A ;I
B1
=1A;I
B2
=-2A;R
L
=40A
Fall time
CONDITIONS
I
E
=200mA , I
C
=0
I
C
=5A ;I
B
=1.2A
I
C
=5A ;I
B
=1.2A
V
CB
=500V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=0.1A ; V
CE
=10V
I
E
=0 ; V
CB
=10V;f=1MHz
I
F
=5A
66
8
1
MIN
5
2SC3892
SYMBOL
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
V
F
t
s
t
f
TYP.
MAX
UNIT
V
5.0
1.5
10
200
12
3
210
2.0
2.5
0.2
V
V
µA
mA
MHz
pF
V
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3892
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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