Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4301
DESCRIPTION
・With
TO-3PML package
・High
voltage switchihg transistor
APPLICATIONS
・Switching
Regulator,
・Lighting
Inverter and general purpose
PINNING
PIN
1
2
3
Base
Collector
Fig.1 simplified outline (TO-3PML) and symbol
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
固电
Collector-base voltage
导½
半
PARAMETER
HA
INC
Collector current
Base current
Collector-emitter voltage
Emitter-base voltage
ES
NG
Open emitter
Open base
MIC
E
CONDITIONS
OR
CT
NDU
O
VALUE
900
800
7
7
14
3.5
UNIT
V
V
V
A
A
A
W
℃
℃
Open collector
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
80
150
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4301
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=10mA; I
B
=0
I
C
=3A;I
B
=0.6A
I
C
=3A;I
B
=0.6A
V
CB
=800V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=3A ; V
CE
=4V
I
E
=-1A ; V
CE
=12V
V
CB
=10V;f=1MHz
10
6
MIN
800
0.5
1.2
100
100
30
MHz
pF
TYP.
MAX
UNIT
V
V
V
μA
μA
Switching times
t
on
t
stg
t
f
固电
Fall time
Turn-on time
导½
半
HA
INC
Storage time
ES
NG
I
C
=3A;I
B1
=0.45A;
I
B2
=-1.5A;
R
L
=83Ω;V
CC
=250V
MIC
E
OR
CT
NDU
O
105
1
5
1
μs
μs
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4301
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4301
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
4
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