Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1229
DESCRIPTION
·With
TO-3PN package
·Complement
to type 2SB912
·High
DC current gain
·High
current capacity and wide ASO
·Low
saturation voltage
APPLICATIONS
·Motor
drivers, printer hammer drivers,
relay drivers,voltage regulator control.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2.5
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
MAX
70
60
6
10
15
60
W
UNIT
V
V
V
A
A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=50mA ;R
BE
=∞
I
C
=5mA ;I
E
=0
I
C
=5A ;I
B
=10mA
I
C
=5A ;I
B
=10mA
V
CB
=40V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=5A ; V
CE
=2V
I
C
=5A ; V
CE
=5V
2000
MIN
60
70
2SD1229
TYP.
MAX
UNIT
V
V
1.5
2.0
0.1
3.0
V
V
mA
mA
20
MHz
Switching times
Turn-on time
Storage time
Fall time
I
C
=500I
B1
=-500I
B2
=5A
V
CC
=20V;R
L
=4Ω
0.6
3.0
1.8
μs
t
on
t
stg
t
f
μs
μs
2
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