SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3979
DESCRIPTION
·With TO-220Fa package
·High breakdown voltage
·High speed switching
·Wide area of safe operation
APPLICATIONS
·For high breakdown voltage high-speed
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
ABSOLUTE MAXIMUM RATINGS AT Ta=25
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
Base current
T
C
=25
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
900
800
7
3
5
1
40
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=10mA , I
B
=0
I
C
=0.8A ;I
B
=0.16A
I
C
=0.8A; I
B
=0.16A
V
CB
=900V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=0.8A ; V
CE
=5V
I
C
=0.15A ; V
CE
=5V
8
6
MIN
800
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
2SC3979
TYP.
MAX
UNIT
V
1.5
1.5
50
50
V
V
µA
µA
10
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=0.8A ;I
B1
=0.16A
I
B2
=-0.32A
V
CC
=250V
0.7
2.5
0.3
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3979
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3979
4
京公网安备 11010802033920号
EEWORLD
