SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
· Wide area of safe operation (ASO)
·High-speed switching
·High collector to base voltage V
CBO
APPLICATIONS
·For high breakdown voltage high-
speed switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
2SC4004
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
900
800
7
1
2
0.3
30
w
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4004
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=1mA , I
B
=0
I
C
=0.2A ;I
B
=0.04A
I
C
=0.2A; I
B
=0.04A
V
CB
=900V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=0.05A ; V
CE
=5V
I
C
=0.5A ; V
CE
=5V
I
C
=0.05A; V
CE
=10V;f=1MHz
6
3
4
MHz
MIN
800
1.5
1.0
50
50
TYP.
MAX
UNIT
V
V
V
µA
µA
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=0.2A ;I
B1
=0.04A;
I
B2
=-0.04A;V
CC
=250V
1.0
3.0
1.0
µs
µs
µs
2
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