Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
KSD2058
DESCRIPTION
・With
TO-220F package
・Complement
to type KSB1366
APPLICATIONS
・With
general purpose applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
电半
固
Collector current
Base current
PARAMETER
Collector-base voltage
导½
CONDITIONS
Open emitter
Collector-emitter voltage
Emitter-base voltage
HAN
INC
SEM
GE
Open base
ON
IC
OR
DUT
MAX
60
60
7
3
0.5
UNIT
V
V
V
A
A
Open collector
T
a
=25℃
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
1.5
W
25
150
-55~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=50mA ;I
B
=0
I
C
=2A ;I
B
=0.2A
I
C
=0.5A;V
CE
=5V
V
CB
=60V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=0.5A ; V
CE
=5V
I
C
=0.5A ; V
CE
=5V
f=1MHz;V
CB
=10V
60
MIN
60
KSD2058
TYP.
MAX
UNIT
V
1.5
3.0
10
1
300
3.0
35
V
V
μA
mA
MHz
pF
Switching times
t
on
t
s
t
f
固电
Fall time
Turn-on time
导½
半
Storage time
HAN
INC
Y
G
150-300
SEM
GE
I
C
=2.0A I
B1
=-I
B2
=0.2A
V
CC
=30V ,R
L
=15Ω
ON
IC
OR
DUT
0.65
1.3
0.65
μs
μs
μs
h
FE
Classifications
O
60-120
100-200
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
KSD2058
固电
导½
半
HAN
INC
SEM
GE
ON
IC
OR
DUT
Fig.2 Outline dimensions
3